Hydrogenated Amorphous Silicon

This collection of 36 invited reviews and 16 invited original papers summarizes the present state of knowledge on the physics and technology of hydrogenated amorphous silicon, and provides a basis to single out those questions that are of utmost priority.

Ever since the work of W.E. Spear and P.G. LeComber had proved that an amorphous semiconductor could indeed also be substitutionally doped, research in the respective field has seen an nearly unprecedented development. The role of hydrogen in atomic and electronic structure as well as in the doping mechanism remains an outstanding problem addressed both to theoreticians and experimentalists, and a highly interesting challenge both to the scientist as well as the engineer.

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